Semiconductors
IPG20N04S409AATMA1 Infineon Technologies Inventory and RFQ Quote
40V 20A 54W 8.6mΩ@17A,10V 4V@22uA 2 N-Channel TDSON-8 MOSFETs ROHS IPG20N04S409AATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPG20N04S409AATMA1
- Brand
- Infineon Technologies
- Qty
- 546000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 20A 54W 8.6mΩ@17A,10V 4V@22uA 2 N-Channel TDSON-8 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 20A
- Power Dissipation (Pd): 54W
- Drain Source On Resistance (RDS(on)@Vgs: 8.6mΩ@17A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@22uA
- Type: 2 N
- Input Capacitance (Ciss@Vds): 2.25nF@25V
- Total Gate Charge (Qg@Vgs): 28nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)