Semiconductors
IPD60R170CFD7ATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET HIGH POWER_NEW IPD60R170CFD7ATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD60R170CFD7ATMA1
- Brand
- Infineon Technologies
- Qty
- 546000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET HIGH POWER_NEW
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 3.5 V
- Qg - Gate Charge: 28 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPD60R170CFD7 SP001617934
- Fall Time: 9 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET