Semiconductors
IPD60R950C6ATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 650V 4.4A DPAK-2 IPD60R950C6ATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD60R950C6ATMA1
- Brand
- Infineon Technologies
- Qty
- 590000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 650V 4.4A DPAK-2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- NRND: Not recommended for new designs.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 3 V
- Width: 6.22 mm
- Qg - Gate Charge: 13 nC
- Vgs - Gate-Source Voltage: 30 V
- Part # Aliases: IPD60R950C6 SP001117730
- Fall Time: 13 ns
- Mounting Style: SMD/SMT