Transistor
IPB042N10N3G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 IPB042N10N3G Infineon Technologies TO-263 Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB042N10N3G
- Brand
- Infineon Technologies
- Qty
- 590000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: PG-TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 9.25 mm
- Qg - Gate Charge: 88 nC
- Vgs - Gate-Source Voltage: 10 V
- Part # Aliases: IPB042N10N3GATMA1 IPB42N1N3GXT SP000446880
- Fall Time: 14 ns
- Mounting Style: SMD/SMT