Semiconductors
IPD046N08N5ATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET DIFFERENTIATED MOSFETS IPD046N08N5ATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPD046N08N5ATMA1
- Brand
- Infineon Technologies
- Qty
- 530000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET DIFFERENTIATED MOSFETS
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 80 V
- Transistor Polarity: N-Channel
- Package / Case: DPAK-3
- Vgs th - Gate-Source Threshold Voltage: 2.2 V
- Qg - Gate Charge: 53 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPD046N08N5 SP001475652
- Fall Time: 6 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET