Semiconductors
IPB80N06S2-09 Infineon Technologies Inventory and RFQ Quote
55V 80A 9.1mΩ@10V,50A 190W 4V@125uA 1PCSNChannel TO-263-3 MOSFETs ROHS IPB80N06S2-09 Infineon Technologies TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB80N06S2-09
- Brand
- Infineon Technologies
- Qty
- 530000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
55V 80A 9.1mΩ@10V,50A 190W 4V@125uA 1PCSNChannel TO-263-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 55V
- Continuous Drain Current (Id): 80A
- Drain Source On Resistance (RDS(on)@Vgs: 9.1mΩ@10V
- Power Dissipation (Pd): 190W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@125uA
- Type: 1 N