Semiconductors
IPB80N06S2-07 Infineon Technologies Inventory and RFQ Quote
55V 80A 5.3mΩ@10V,68A 250W 3V@180uA 1PCSNChannel TO-263 MOSFETs ROHS IPB80N06S2-07 Infineon Technologies TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB80N06S2-07
- Brand
- Infineon Technologies
- Qty
- 535000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
55V 80A 5.3mΩ@10V,68A 250W 3V@180uA 1PCSNChannel TO-263 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 55V
- Continuous Drain Current (Id): 80A
- Drain Source On Resistance (RDS(on)@Vgs: 5.3mΩ@10V
- Power Dissipation (Pd): 250W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@180uA
- Reverse Transfer Capacitance (Crss@Vds): 215pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 3.4nF@25V
- Total Gate Charge (Qg@Vgs): 86nC@0~10V
- Operating Temperature: -55℃~+175℃@(Tj)