Semiconductors
IPB35N10S3L26ATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T IPB35N10S3L26ATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB35N10S3L26ATMA1
- Brand
- Infineon Technologies
- Qty
- 535000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 20.3 mOhms
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 1.2 V
- Width: 9.25 mm
- Qg - Gate Charge: 39 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB35N10S3L-26 IPB35N1S3L26XT SP000776044
- Fall Time: 3 ns