Semiconductors
IPB160N04S4-H1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 IPB160N04S4-H1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB160N04S4-H1
- Brand
- Infineon Technologies
- Qty
- 510000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 40 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 1.4 mOhms
- Package / Case: TO-263-7
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 9.25 mm
- Qg - Gate Charge: 137 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB160N04S4H1ATMA1 IPB16N4S4H1XT SP000711252
- Fall Time: 33 ns