Semiconductors
IPB016N06L3G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 IPB016N06L3G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB016N06L3G
- Brand
- Infineon Technologies
- Qty
- 510000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: N-Channel
- Package / Case: TO-263-7
- Vgs th - Gate-Source Threshold Voltage: 1.2 V
- Width: 9.25 mm
- Qg - Gate Charge: 166 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB016N06L3GATMA1 IPB16N6L3GXT SP000453040
- Fall Time: 38 ns
- Mounting Style: SMD/SMT