Semiconductors
IPB100N04S4H2 Diodes Incorporated Inventory and RFQ Quote
MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2 IPB100N04S4H2 Diodes Incorporated TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB100N04S4H2
- Brand
- Diodes Incorporated
- Qty
- 530000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 40 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 2.1 mOhms
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 9.25 mm
- Qg - Gate Charge: 90 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB100N04S4H2ATMA1 IPB1N4S4H2XT SP000711274
- Fall Time: 21 ns