Semiconductors
IPB065N03LGATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 IPB065N03LGATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB065N03LGATMA1
- Brand
- Infineon Technologies
- Qty
- 553000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- NRND: Not recommended for new designs.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Width: 9.25 mm
- Qg - Gate Charge: 11 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: G IPB065N03L IPB65N3LGXT SP000254709
- Fall Time: 3.4 ns
- Mounting Style: SMD/SMT