Semiconductors
IPB027N10N5ATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 100V 120A D2PAK-2 IPB027N10N5ATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB027N10N5ATMA1
- Brand
- Infineon Technologies
- Qty
- 583000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 100V 120A D2PAK-2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 2.2 V
- Width: 9.25 mm
- Qg - Gate Charge: 112 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 17 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET