Semiconductors
IPB010N06N Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 60V 180A D2PAK-6 IPB010N06N Infineon Technologies D²PAK / TO-263-7L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IPB010N06N
- Brand
- Infineon Technologies
- Qty
- 589000
- Package
- D²PAK / TO-263-7L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 60V 180A D2PAK-6
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: N-Channel
- Package / Case: TO-263-7
- Vgs th - Gate-Source Threshold Voltage: 2.1 V
- Width: 9.25 mm
- Qg - Gate Charge: 243 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: IPB010N06NATMA1 IPB1N6NXT SP000917410
- Fall Time: 23 ns
- Mounting Style: SMD/SMT