Semiconductors
IAUZ30N08S5N186ATMA1 Infineon Technologies Inventory and RFQ Quote
80V 30A 18.6mΩ@15A,10V 41W 3.8V@13uA 1PCSNChannel TSDSON-8-32 MOSFETs ROHS IAUZ30N08S5N186ATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- IAUZ30N08S5N186ATMA1
- Brand
- Infineon Technologies
- Qty
- 590000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
80V 30A 18.6mΩ@15A,10V 41W 3.8V@13uA 1PCSNChannel TSDSON-8-32 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 30A
- Drain Source On Resistance (RDS(on)@Vgs: 18.6mΩ@15A
- Power Dissipation (Pd): 41W
- Gate Threshold Voltage (Vgs(th)@Id): 3.8V@13uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 759pF@40V
- Total Gate Charge (Qg@Vgs): 12.1nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)