Semiconductors
FZ3600R17KE3 Infineon Technologies Inventory and RFQ Quote
350W 1.7kV - IGBT Transistors / Modules ROHS FZ3600R17KE3 Infineon Technologies S190X140-9L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- FZ3600R17KE3
- Brand
- Infineon Technologies
- Qty
- 590000
- Package
- S190X140-9L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
350W 1.7kV - IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Power Dissipation (Pd): 350W
- Operating Temperature: -40℃~+125℃@(Tj)
- Collector-Emitter Breakdown Voltage (Vces): 1.7kV
- Input Capacitance (Cies@Vce): 3.3nF@25V
- Type: -
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.45V@3.6kA