Semiconductors
HYG035N02KA1C2 HUAYI Inventory and RFQ Quote
20V 95A 2.6mΩ@4.5V,15A 57.6W 700mV@250uA 1PCSNChannel PDFN-8(5.9x5.2) MOSFETs ROHS HYG035N02KA1C2 HUAYI PDFN8L5x6 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG035N02KA1C2
- Brand
- HUAYI
- Qty
- 515000
- Package
- PDFN8L5x6
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
20V 95A 2.6mΩ@4.5V,15A 57.6W 700mV@250uA 1PCSNChannel PDFN-8(5.9x5.2) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 95A
- Drain Source On Resistance (RDS(on)@Vgs: 2.6mΩ@4.5V
- Power Dissipation (Pd): 57.6W
- Gate Threshold Voltage (Vgs(th)@Id): 700mV@250uA
- Reverse Transfer Capacitance (Crss@Vds): 510pF@10V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 4.082nF@10V
- Total Gate Charge (Qg@Vgs): 28nC@2.5V
- Operating Temperature: -55℃~+175℃@(Tj)