Semiconductors
HYG030N03LQ1D HUAYI Inventory and RFQ Quote
30V 100A 2.5mΩ@10V,30A 57W 1.3V@250uA 1PCSNChannel TO-252-2L MOSFETs ROHS HYG030N03LQ1D HUAYI TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG030N03LQ1D
- Brand
- HUAYI
- Qty
- 517000
- Package
- TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 100A 2.5mΩ@10V,30A 57W 1.3V@250uA 1PCSNChannel TO-252-2L MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 100A
- Drain Source On Resistance (RDS(on)@Vgs: 2.5mΩ@10V
- Power Dissipation (Pd): 57W
- Gate Threshold Voltage (Vgs(th)@Id): 1.3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 292pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.958nF@25V
- Total Gate Charge (Qg@Vgs): 29.7nC@4.5V
- Operating Temperature: -55℃~+175℃@(Tj)