Semiconductors
HYG025N06LS1C2 HUAYI Inventory and RFQ Quote
60V 170A 2.1mΩ@10V,20A 130W 2.1V@250uA 1PCSNChannel DFN-8(5.2x5.9) MOSFETs ROHS HYG025N06LS1C2 HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG025N06LS1C2
- Brand
- HUAYI
- Qty
- 598000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 170A 2.1mΩ@10V,20A 130W 2.1V@250uA 1PCSNChannel DFN-8(5.2x5.9) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 170A
- Drain Source On Resistance (RDS(on)@Vgs: 2.1mΩ@10V
- Power Dissipation (Pd): 130W
- Gate Threshold Voltage (Vgs(th)@Id): 2.1V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 10.2pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 3.915nF@25V
- Total Gate Charge (Qg@Vgs): 28.2nC@10V
- Operating Temperature: -