Semiconductors
HY030N06C2 HUAYI Inventory and RFQ Quote
65V 100A 2.8mΩ@10V,20A 48W 2.5V@250uA 1PCSNChannel PPAK-8L(5x6) MOSFETs ROHS HY030N06C2 HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HY030N06C2
- Brand
- HUAYI
- Qty
- 600000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
65V 100A 2.8mΩ@10V,20A 48W 2.5V@250uA 1PCSNChannel PPAK-8L(5x6) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 65V
- Continuous Drain Current (Id): 100A
- Drain Source On Resistance (RDS(on)@Vgs: 2.8mΩ@10V
- Power Dissipation (Pd): 48W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1 N