Semiconductors
HSBB3909 HUASHUO Inventory and RFQ Quote
30V 18mΩ@10V,8A 20W 2.5V@250uA 1PCSNChannel+1PCSPChannel PRPAK3x3 MOSFETs ROHS HSBB3909 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSBB3909
- Brand
- HUASHUO
- Qty
- 600000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 18mΩ@10V,8A 20W 2.5V@250uA 1PCSNChannel+1PCSPChannel PRPAK3x3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 24A
- Drain Source On Resistance (RDS(on)@Vgs: 18mΩ@10V
- Power Dissipation (Pd): 20W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 234pF@15V
- Type: 1 N +1 P
- Input Capacitance (Ciss@Vds): 2.213nF@15V
- Total Gate Charge (Qg@Vgs): 7.2nC@4.5V
- Operating Temperature: -55℃~+150℃@(Tj)