Semiconductors
HY3306P HUAYI Inventory and RFQ Quote
60V 130A 6.8mΩ@10V,65A 230W 4V@250uA 1PCSNChannel TO-220FB-3L MOSFETs ROHS HY3306P HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HY3306P
- Brand
- HUAYI
- Qty
- 577000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 130A 6.8mΩ@10V,65A 230W 4V@250uA 1PCSNChannel TO-220FB-3L MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 130A
- Drain Source On Resistance (RDS(on)@Vgs: 6.8mΩ@10V
- Power Dissipation (Pd): 230W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N