Semiconductors
hy3010b HUAYI Inventory and RFQ Quote
100V 100A 10mΩ@10V,50A 192W 3V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS hy3010b HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- hy3010b
- Brand
- HUAYI
- Qty
- 526000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 100A 10mΩ@10V,50A 192W 3V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 100A
- Drain Source On Resistance (RDS(on)@Vgs: 10mΩ@10V
- Power Dissipation (Pd): 192W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 260pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 3.1nF@25V
- Total Gate Charge (Qg@Vgs): 76nC@10V
- Operating Temperature: -