Semiconductors
ZXTP25012EFHTA Diodes Incorporated Inventory and RFQ Quote
Bipolar Transistors - BJT PNP 12V HIGH GAIN ZXTP25012EFHTA Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- ZXTP25012EFHTA
- Brand
- Diodes Incorporated
- Qty
- 526000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
Bipolar Transistors - BJT PNP 12V HIGH GAIN
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: PNP
- Emitter- Base Voltage VEBO: 7 V
- Width: 1.4 mm
- Package / Case: SOT-23-3
- Mounting Style: SMD/SMT
- Product Category: Bipolar Transistors - BJT
- Brand: Diodes Incorporated
- DC Current Gain hFE Max: 500 at 10 mA, 2 V
- Unit Weight: 0.000282 oz
- Collector- Emitter Voltage VCEO Max: 12 V