Semiconductors
HY1904B HUAYI Inventory and RFQ Quote
40V 90A 4.7mΩ@10V,45A 100W 1.7V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS HY1904B HUAYI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HY1904B
- Brand
- HUAYI
- Qty
- 547000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 90A 4.7mΩ@10V,45A 100W 1.7V@250uA 1PCSNChannel TO-263-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 90A
- Drain Source On Resistance (RDS(on)@Vgs: 4.7mΩ@10V
- Power Dissipation (Pd): 100W
- Gate Threshold Voltage (Vgs(th)@Id): 1.7V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 70pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.274nF@25V
- Total Gate Charge (Qg@Vgs): 52nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)