Semiconductors
HYG045P03LQ1C2 HUAYI Inventory and RFQ Quote
30V 80A 62.5W 3.8mΩ@10V,20A 1.6V@250uA 1PCSPChannel PPAK-8(5x6) MOSFETs ROHS HYG045P03LQ1C2 HUAYI PPAK5X6-8L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HYG045P03LQ1C2
- Brand
- HUAYI
- Qty
- 548000
- Package
- PPAK5X6-8L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 80A 62.5W 3.8mΩ@10V,20A 1.6V@250uA 1PCSPChannel PPAK-8(5x6) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 80A
- Power Dissipation (Pd): 62.5W
- Drain Source On Resistance (RDS(on)@Vgs: 3.8mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 1.6V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 575pF@25V
- Type: 1 P
- Input Capacitance (Ciss@Vds): 7.66nF@25V
- Total Gate Charge (Qg@Vgs): 313.3nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)