Semiconductors
HSBB6066 HUASHUO Inventory and RFQ Quote
60V 60A 4.4mΩ@10V,20A 45W 1.65V@250uA 1 N-Channel DFN-8(3x3) MOSFETs ROHS HSBB6066 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSBB6066
- Brand
- HUASHUO
- Qty
- 549000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 60A 4.4mΩ@10V,20A 45W 1.65V@250uA 1 N-Channel DFN-8(3x3) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 60A
- Drain Source On Resistance (RDS(on)@Vgs: 4.4mΩ@10V
- Power Dissipation (Pd): 45W
- Gate Threshold Voltage (Vgs(th)@Id): 1.65V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 25pF@30V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.67nF@30V
- Total Gate Charge (Qg@Vgs): 33nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)