Semiconductors
HSBA4909 HUASHUO Inventory and RFQ Quote
40V 15A 36W 1.5V@250uA 1 N-Channel + 1 P-Channel DFN-8-EP(5x5.8) MOSFETs ROHS HSBA4909 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSBA4909
- Brand
- HUASHUO
- Qty
- 548000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 15A 36W 1.5V@250uA 1 N-Channel + 1 P-Channel DFN-8-EP(5x5.8) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 15A
- Drain Source On Resistance (RDS(on)@Vgs: 8mΩ@10V
- Power Dissipation (Pd): 36W
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 136pF@15V
- Type: 1 N +1 P
- Input Capacitance (Ciss@Vds): 2.333nF@15V
- Total Gate Charge (Qg@Vgs): 19nC@4.5V