Semiconductors
HSBA060N10 HUASHUO Inventory and RFQ Quote
100V 86A 89W 6mΩ@10V,20A 3V@250uA 1 N-Channel DFN-8(5.1x5.7) MOSFETs ROHS HSBA060N10 HUASHUO Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HSBA060N10
- Brand
- HUASHUO
- Qty
- 507000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 86A 89W 6mΩ@10V,20A 3V@250uA 1 N-Channel DFN-8(5.1x5.7) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 86A
- Power Dissipation (Pd): 89W
- Drain Source On Resistance (RDS(on)@Vgs: 6mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1 N