Semiconductors
HN1B04FE-GR,LF Toshiba Semiconductor and Storage Inventory and RFQ Quote
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp HN1B04FE-GR,LF Toshiba Semiconductor and Storage Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HN1B04FE-GR,LF
- Brand
- Toshiba Semiconductor and Storage
- Qty
- 506000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: NPN, PNP
- Emitter- Base Voltage VEBO: 5 V
- Package / Case: SOT-563-6
- Packaging: ['Cut Tape', 'MouseReel', 'Reel']
- Product Category: Bipolar Transistors - BJT
- Brand: Toshiba
- DC Current Gain hFE Max: 400
- Collector- Emitter Voltage VCEO Max: 50 V
- Product Type: BJTs - Bipolar Transistors
- Maximum Operating Temperature: + 150 C