Semiconductors
HGT1S7N60B3 Harris Corporation Inventory and RFQ Quote
60W 14A 600V I2PAK(TO-262) IGBT Transistors / Modules ROHS HGT1S7N60B3 Harris Corporation I²PAK / TO-262 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- HGT1S7N60B3
- Brand
- Harris Corporation
- Qty
- 506000
- Package
- I²PAK / TO-262
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60W 14A 600V I2PAK(TO-262) IGBT Transistors / Modules ROHS
- Source Category
- /MOS / > IGBT /
- Reference Source
- LCSC
Key Specifications
- Turn?off Delay Time (Td(off)): 130ns
- Power Dissipation (Pd): 60W
- Turn?on Delay Time (Td(on)): 26ns
- Operating Temperature: -55℃~+150℃@(Tj)
- Collector Current (Ic): 14A
- Collector-Emitter Breakdown Voltage (Vces): 600V
- Input Capacitance (Cies@Vce): -
- Type: -
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.1V@15V
- Total Gate Charge (Qg@Ic: 30nC