Semiconductors
FDP10N60NZ onsemi Inventory and RFQ Quote
MOSFET 600N-Channel MOSFET UniFET-II FDP10N60NZ onsemi Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- FDP10N60NZ
- Brand
- onsemi
- Qty
- 544000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 600N-Channel MOSFET UniFET-II
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: TO-220-3
- Vgs th - Gate-Source Threshold Voltage: 5 V
- Width: 4.7 mm
- Qg - Gate Charge: 23 nC
- Vgs - Gate-Source Voltage: 25 V
- Fall Time: 50 nS
- Mounting Style: Through Hole
- Product Category: MOSFET