Semiconductors
FDD6030L onsemi Inventory and RFQ Quote
MOSFET 30V N-Channel Power Trench FDD6030L onsemi Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- FDD6030L
- Brand
- onsemi
- Qty
- 544000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 30V N-Channel Power Trench
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Width: 6.22 mm
- Qg - Gate Charge: 28 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: FDD6030L_NL
- Type: MOSFET
- Fall Time: 12 ns