Semiconductors
DMT10H4M5LPS-13 Diodes Incorporated Inventory and RFQ Quote
100V 4.3mΩ@30A,10V 2.3W 2.5V@250uA 1 N-Channel PowerDI5060-8 MOSFETs ROHS DMT10H4M5LPS-13 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMT10H4M5LPS-13
- Brand
- Diodes Incorporated
- Qty
- 508000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 4.3mΩ@30A,10V 2.3W 2.5V@250uA 1 N-Channel PowerDI5060-8 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 19A
- Drain Source On Resistance (RDS(on)@Vgs: 4.3mΩ@30A
- Power Dissipation (Pd): 2.3W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 4.843nF@50V
- Total Gate Charge (Qg@Vgs): 80nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)