Power
DMT10H010LCT Diodes Incorporated Inventory and RFQ Quote
MOSFET 100V N-Ch Enh FET 9.5mOHm 10V 98A DMT10H010LCT Diodes Incorporated TO-220 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMT10H010LCT
- Brand
- Diodes Incorporated
- Qty
- 508000
- Package
- TO-220
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET 100V N-Ch Enh FET 9.5mOHm 10V 98A
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: TO-220-3
- Vgs th - Gate-Source Threshold Voltage: 1.4 V
- Qg - Gate Charge: 53.7 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 22 ns
- Mounting Style: Through Hole
- Product Category: MOSFET
- Brand: Diodes Incorporated