Semiconductors
DMN3032LE-13 Diodes Incorporated Inventory and RFQ Quote
MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC DMN3032LE-13 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMN3032LE-13
- Brand
- Diodes Incorporated
- Qty
- 512000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET FET BVDSS 25V 30V N-Ch 498pF 4.1nC
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 30 V
- Transistor Polarity: N-Channel
- Package / Case: SOT-223-4
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Qg - Gate Charge: 11.3 nC
- Vgs - Gate-Source Voltage: 10 V
- Fall Time: 1.9 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET
- Brand: Diodes Incorporated