Semiconductors
DMN1025UFDB-7 Diodes Incorporated Inventory and RFQ Quote
MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W DMN1025UFDB-7 Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- DMN1025UFDB-7
- Brand
- Diodes Incorporated
- Qty
- 512000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 12 V
- Transistor Polarity: N-Channel
- Package / Case: U-DFN2020-B-6
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Qg - Gate Charge: 12.6 nC
- Vgs - Gate-Source Voltage: 10 V
- Fall Time: 2.8 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET
- Brand: Diodes Incorporated