Semiconductors
BSZ900N15NS3GATMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3 BSZ900N15NS3GATMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSZ900N15NS3GATMA1
- Brand
- Infineon Technologies
- Qty
- 548000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 150 V
- Transistor Polarity: N-Channel
- Package / Case: TSDSON-8
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 3.3 mm
- Qg - Gate Charge: 7 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: BSZ900N15NS3 BSZ9N15NS3GXT G SP000677866
- Fall Time: 3 ns
- Mounting Style: SMD/SMT