Semiconductors
BSC16DN25NS3 G Infineon Technologies Inventory and RFQ Quote
MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 BSC16DN25NS3 G Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- BSC16DN25NS3 G
- Brand
- Infineon Technologies
- Qty
- 548000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 250 V
- Transistor Polarity: N-Channel
- Package / Case: PG-TDSON-8
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 5.15 mm
- Qg - Gate Charge: 8.6 nC
- Vgs - Gate-Source Voltage: 10 V
- Part # Aliases: BSC16DN25NS3GATMA1 BSC16DN25NS3GXT SP000781782
- Fall Time: 4 ns
- Mounting Style: SMD/SMT