Transistor
AP3N06I A Power microelectronics Inventory and RFQ Quote
60V 3A 1W 80mΩ@10V,2A 2.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS AP3N06I A Power microelectronics SOT-23 Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- AP3N06I
- Brand
- A Power microelectronics
- Qty
- 548000
- Package
- SOT-23
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
60V 3A 1W 80mΩ@10V,2A 2.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 3A
- Power Dissipation (Pd): 1W
- Drain Source On Resistance (RDS(on)@Vgs: 80mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 25pF@15V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 511pF@15V
- Total Gate Charge (Qg@Vgs): 5nC@4.5V
- Operating Temperature: -55℃~+150℃@(Tj)