Semiconductors
AP80N08D A Power microelectronics Inventory and RFQ Quote
80V 80A 4.8mΩ@10V,20A 56W 2.5V@250uA 1 N-Channel TO-252-3 MOSFETs ROHS AP80N08D A Power microelectronics TO-252-3 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- AP80N08D
- Brand
- A Power microelectronics
- Qty
- 552000
- Package
- TO-252-3
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
80V 80A 4.8mΩ@10V,20A 56W 2.5V@250uA 1 N-Channel TO-252-3 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 80V
- Continuous Drain Current (Id): 80A
- Drain Source On Resistance (RDS(on)@Vgs: 4.8mΩ@10V
- Power Dissipation (Pd): 56W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 38pF@40V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.86nF@40V
- Total Gate Charge (Qg@Vgs): 40nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)