Semiconductors
ZXTN2010ZQTA Diodes Incorporated Inventory and RFQ Quote
Bipolar Transistors - BJT Pwr Low Sat Transistor ZXTN2010ZQTA Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- ZXTN2010ZQTA
- Brand
- Diodes Incorporated
- Qty
- 536000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
Bipolar Transistors - BJT Pwr Low Sat Transistor
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: NPN
- Emitter- Base Voltage VEBO: 8.1 V
- Product Category: Bipolar Transistors - BJT
- Brand: Diodes Incorporated
- DC Current Gain hFE Max: 300
- Collector- Emitter Voltage VCEO Max: 80 V
- Product Type: BJTs - Bipolar Transistors
- Maximum Operating Temperature: + 150 C
- Manufacturer: Diodes Incorporated
- Gain Bandwidth Product fT: 130 MHz