Semiconductors
ZXMN10A11GTA Diodes Incorporated Inventory and RFQ Quote
MOSFET 100V N-Chnl UMOS ZXMN10A11GTA Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- ZXMN10A11GTA
- Brand
- Diodes Incorporated
- Qty
- 582000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 100V N-Chnl UMOS
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Package / Case: SOT-223-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 3.7 mm
- Qg - Gate Charge: 5.4 nC
- Vgs - Gate-Source Voltage: 10 V
- Type: MOSFET
- Fall Time: 3.5 ns
- Mounting Style: SMD/SMT