Semiconductors
ZXMHC6A07T8TA Diodes Incorporated Inventory and RFQ Quote
MOSFET 60V UMOS H-Bridge ZXMHC6A07T8TA Diodes Incorporated Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- ZXMHC6A07T8TA
- Brand
- Diodes Incorporated
- Qty
- 539000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 60V UMOS H-Bridge
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: N-Channel, P-Channel
- Package / Case: SM-8
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Width: 3.7 mm
- Qg - Gate Charge: 3.2 nC, 5.1 nC
- Vgs - Gate-Source Voltage: 10 V
- Type: MOSFET
- Fall Time: 2 ns, 5.8 ns
- Mounting Style: SMD/SMT