Semiconductors
YJD18GP10A Texas Instruments Inventory and RFQ Quote
100V 18A 75mΩ@10V,10A 72W 1.8V@250uA 1PCSPChannel TO-252 MOSFETs ROHS YJD18GP10A Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- YJD18GP10A
- Brand
- Texas Instruments
- Qty
- 585000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 18A 75mΩ@10V,10A 72W 1.8V@250uA 1PCSPChannel TO-252 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 18A
- Drain Source On Resistance (RDS(on)@Vgs: 75mΩ@10V
- Power Dissipation (Pd): 72W
- Gate Threshold Voltage (Vgs(th)@Id): 1.8V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 25pF@50V
- Type: 1 P
- Input Capacitance (Ciss@Vds): 1.051nF@50V
- Total Gate Charge (Qg@Vgs): 9.7nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)