Semiconductors
UT3N10G-AE3-R UTC(Unisonic Tech) Inventory and RFQ Quote
100V 3A 165mΩ@10V,3A 350mW 3V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS UT3N10G-AE3-R UTC(Unisonic Tech) Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- UT3N10G-AE3-R
- Brand
- UTC(Unisonic Tech)
- Qty
- 549000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 3A 165mΩ@10V,3A 350mW 3V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 3A
- Drain Source On Resistance (RDS(on)@Vgs: 165mΩ@10V
- Power Dissipation (Pd): 350mW
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 36pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 720pF@25V
- Total Gate Charge (Qg@Vgs): 20nC@80V
- Operating Temperature: -