Semiconductors
UMZ1N onsemi Inventory and RFQ Quote
50V 150mW 120@1mA,6V 150mA NPN+PNP SOT-363 Bipolar (BJT) ROHS UMZ1N onsemi Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- UMZ1N
- Brand
- onsemi
- Qty
- 518000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
50V 150mW 120@1mA,6V 150mA NPN+PNP SOT-363 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Power Dissipation (Pd): 150mW
- DC Current Gain (hFE@Ic: 120@1mA
- Collector Current (Ic): 150mA
- Transition Frequency (fT): 180MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 400mV@50mA
- Transistor Type: NPN+PNP
- Operating Temperature: -55℃~+150℃