Semiconductors
TTD18P10AT Microchip Technology Inventory and RFQ Quote
100V 18A 80mΩ@10V,9A 113W 1.7V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS TTD18P10AT Microchip Technology Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- TTD18P10AT
- Brand
- Microchip Technology
- Qty
- 532000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 18A 80mΩ@10V,9A 113W 1.7V@250uA 1PCSPChannel TO-252-2 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 18A
- Drain Source On Resistance (RDS(on)@Vgs: 80mΩ@10V
- Power Dissipation (Pd): 113W
- Gate Threshold Voltage (Vgs(th)@Id): 1.7V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 53pF@50V
- Type: 1 P
- Input Capacitance (Ciss@Vds): 4.182nF@50V
- Total Gate Charge (Qg@Vgs): 70nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)