Transistor
TSG12N10AT Diodes Incorporated Inventory and RFQ Quote
100V 55A 12mΩ@10V,20A 56.5W 2.5V@250uA 1PCSNChannel DFN-8-EP(5.8x5.3) MOSFETs ROHS TSG12N10AT Diodes Incorporated PDFN5X6 Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- TSG12N10AT
- Brand
- Diodes Incorporated
- Qty
- 585000
- Package
- PDFN5X6
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
100V 55A 12mΩ@10V,20A 56.5W 2.5V@250uA 1PCSNChannel DFN-8-EP(5.8x5.3) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 55A
- Drain Source On Resistance (RDS(on)@Vgs: 12mΩ@10V
- Power Dissipation (Pd): 56.5W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1 N