Semiconductors
TQM110NB04DCR RLG Taiwan Semiconductor Corporation Inventory and RFQ Quote
40V 11mΩ@10A,10V 3.8V@250uA 2 N-Channel PDFNU-8(5x6) MOSFETs ROHS TQM110NB04DCR RLG Taiwan Semiconductor Corporation Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- TQM110NB04DCR RLG
- Brand
- Taiwan Semiconductor Corporation
- Qty
- 516000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 11mΩ@10A,10V 3.8V@250uA 2 N-Channel PDFNU-8(5x6) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 10A
- Power Dissipation (Pd): 2.5W
- Drain Source On Resistance (RDS(on)@Vgs: 11mΩ@10A
- Gate Threshold Voltage (Vgs(th)@Id): 3.8V@250uA
- Type: 2 N
- Input Capacitance (Ciss@Vds): 1.354nF@20V
- Total Gate Charge (Qg@Vgs): 26nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)